Harshit Agarwal

Harshit Agarwal
Associate ProfessorAbout
My research group (Nano Devices
and Application Lab) specializes in compact modeling for analog/RF applications
of advanced semiconductor devices, including bulk MOSFETs, high-voltage MOSFETs
(HV-MOS), and state-of-the-art technologies such as FinFETs, Nanosheets, and
Gate-All-Around (GAA) FETs. I have over a decade of experience in developing
industry-standard compact models, which are currently utilized in commercial
design workflows. This includes contributions to BSIM-Bulk, BSIM-Bulk based
high-voltage models, BSIM-CMG, among others. We are developing 2d memories for
hardware security, developing industry standard compact model for ElectroStatic
Discharge FETs, and investigating semiconductor behaviour at cryogenic
temperatures for quantum applications.