Lithography Tools

Double - Side Mask Aligner System
Direct Writing Maskless Lithography System
Oven
Hot Plate
Fume Hoods

Double - Side Mask Aligner System

NAME OF INSTRUMENT: DOUBLE - SIDE MASK ALIGNER SYSTEM

COMPANY: OPTICAl ASSOCIATES Inc. (USA)

MODEL NUMBER: 0130-111795 (OAI 806 EBA 500W NUV)

APPLICATIONS: Fabrication of microstructures based on optical lithography process using pre-defined mask with precise alignment on both sides of the wafers. Wafers up to 6” can be used.

Specifications

Parameter	Specification
Mask Rotation	± 45°
Mask Size	Up to 9" × 9"
Mask Loading	Vacuum and mechanical clamp
Mask/Substrate Pressure	User definable (Electronically Enhanced Hard Contact)
Chuck Motion Control	X, Y, Z & Theta (motorized joystick)
Exposure Gap	0–3000 µm
Gap Adjustment	1 µm
Mechanical Resolution	0.1 µm
X, Y Travel	± 5 mm
Theta Travel	± 4°
Leveling	Automated wedge-compensation system
Overlay Accuracy	Top to back < 2 µm (3σ), Top side to 0.5 µm
Substrate Size	Up to 200 mm square
Printing Modes	Proximity, Soft, Hard, and Vacuum Contact
Printing Resolution	Vacuum: submicron Hard contact: to 1 µm Soft contact: to 2 µm Proximity: 3–5 µm with 15–20 µm gap
Exposure Time	1–3200 seconds in 0.1 second increments
Alignment Optics Magnification	Top: Continuous zoom – 70× to 400× (optional 140× to 800×) Bottom: 180×
Alignment Optics Separation	Top: 42 mm to outside of mask (optional to 9 mm) Bottom: 19 mm to 200 mm (single microscope: 0 mm to 200 mm)

Direct Writing Maskless Lithography System

NAME OF INSTRUMENT: DIRECT WRITING MASKLESS LITHOGRAPHY SYSTEM

COMPANY: DURHAM MAGNETO OPTICS LTD (UNITED KINGDOM)

MODEL: MICRO WRITER ML3 PRO WITH DUAL WAVELENGTH LIGHT SOURCE

APPLICATIONS: Maskless Lithography (direct laser writer) to define microstructures based on optical lithography process with a resolution of 0.6 µm.

Specifications

Parameter	Specification
Maximum substrate size	230 mm × 230 mm × 15 mm
Maximum writing area	195 mm × 195 mm
Exposure minimum feature sizes	0.6 µm, 1 µm, 2 µm, 5 µm. 0.4 µm as option.
Surface tracking autofocus system?	Yes
Edge locating laser for automatic wafer centering?	Yes
Greyscale lithography?	Yes
Alignment microscope objectives	x3, x5, x10, x20. x50 as option.
Automatic lens changer for exposure resolution and alignment microscope?	Yes
Backside alignment?	Available as option
Exposure wavelength	385 nm. 365 nm available as option.
Maximum writing speed	17 mm²/min at 0.6 µm resolution 50 mm²/min at 1 µm resolution 120 mm²/min at 2 µm resolution 180 mm²/min at 5 µm resolution
Overlay alignment accuracy at best resolution	±0.5 µm
Minimum addressable grid	100 nm
Motion stage minimum XY step size	4 nm
XY interferometer resolution	1 nm
Optical surface profiler Z resolution	100 nm